[23a-E302-1~11] CS.9 Code-sharing Session of 13.7 & 15.6

[23a-E302-6] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

Syota Kuwahara¹, Takuya Miyamoto¹, Yuuki Sato¹, 〇Shinzo Yoshikado¹, Kikuro Takemoto², Hiroyuki Uno², Naoto Kimura², Masanori Takasaki² (1.Doshisha Univ., 2.Yamanaka Hutech)

Keywords:gallium nitride thin films, RF magnetron sputtering, powder target or single crystal target

Using the GaN powder of purity of 99.999% and more than or N-type GaN single crystal wafer targets doped Si, the thin films of GaN were depositted by RF magnetron sputtering. Sapphire single crystal as a substrate and nitrogengas as dischage gas are used. Deposition temperature and time were changed. The (002) plane was oriented preferentially at the substarate temperatures below 500 ℃ and other planes such as (011) and (010) were observed at the higher substrate temperature.