[23a-E307-1~11] 13.5 デバイス／配線／集積化技術

▲ [23a-E307-10] Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement

〇(PC)Chitra Pandy¹、Kensuke Yamaguchi²、Yoichiro Neo¹、Hidenori Mimura¹、Daniel Moraru¹ (1.Research Institute of Electronics,Shizuoka Univ、2.Graduate School of Integrated Science and Technology, Shizuoka Univ)

キーワード：Semiconductor Nanowire, Band-to-Band Tunneling, Dopant atoms

Band-to-band tunneling (BTBT) in silicon is a promising alternative mechanism for sub-thermal swing devices, such as tunnel field-effect transistors (TFETs). Si is an indirect-bandgap material, so this mechanism is hindered by the need for phonon assistance to conserve momentum in tunneling between bands. It can be expected, however, that the presence of dopant-induced states in the depletion region can relax this condition. As device dimensions are reduced, discrete dopants at front edges of the depletion region can become critical in providing pathways for BTBT transport in Si nanodiodes.
Here, we address key factors by simulations, combining first-principles (ab initio) and semi-empirical (transport) simulations to obtain current-voltage (IV) characteristics under specific conditions. Focus is on donor-acceptor (DA) pairs in different configurations between highly-doped p⁺/n⁺ leads