[23a-E307-1~11] 13.5 デバイス／配線／集積化技術

▼ [23a-E307-2] Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation

〇(DC)Jupalli Taruna Teja^1,2、Ananta Debnath²、Yukinori Ono^1,2、Daniel Moraru^1,2 (1.GSST, Shizuoka Univ.、2.Research Institute of Electronics, Shizuoka Univ.)

キーワード：Single-electron tunneling, Quantum dot, Dopant atoms

Single-electron tunneling (SET) transistors can offer low power consumption, scalability to the atomic-level, and possibility of ultra-large-scale integration for next-generation nanoelectronics. Such single-electron transistors can operate even with a donor atom as quantum dot (QD), but this operation has been achieved only at low temperatures (T≤100 K) due to the low barrier height of single donors allowing thermally-activated transport at high temperatures. By increasing the doping concentration, a QD can be formed by multiple donors if they are close to each other, which can increase the barrier height, but sophisticated techniques are required to isolate such a QD from source/drain leads. Here, we investigate the statistical formation of isolated QDs in uniformly-doped Si nanotransistors, showing that high doping and low dimensionality can allow the observation of SET functionality even at room temperature.