[23a-F308-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-F308-1] Evaluation of Mg₂Si substrate using X-ray rocking curve measurement (Ⅱ)

〇Tsubasa Umehara¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:semiconductor, Mg2Si, X-ray

Mg₂Si, which has a energy band width of about 0.6 eV at room temperature, is expected to be a low-cost material for photodetectors in the short-wavelength infrared region suitable for mass production. We previously reported the evaluation of the crystallinity of the polished surface of the substrate using the peak tail of XRC for the establishment of wafer process technology, but the peak showed cracks and deviation from the ω-axis. In this study, we report the results of the evaluation again after reviewing the procedures.