[23a-F308-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-F308-2] Relationship between carrier concentration and IR absorption in Mg₂Si crystal II

〇Hiroto Tsuchida¹, Naoki Mizunuma¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:Mg2Si, FTIR, IR absorption

We reported that the electron concentration in n-type Mg₂Si can be easily estimated from the optical absorption peak at 0.4 eV caused by the conduction band transition. In order to quantitatively estimate the electron concentration using optical absorption in the future, it is necessary to establish appropriate measurement conditions and methods for analyzing the spectra. In this study, we adjusted the transmission area and thickness of the sample, and also evaluated the relationship between the absorption peak intensity and the peak integral intensity of 0.4eV absorption peak.