[23a-F408-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [23a-F408-4] Temperature dependence and endurance in a Ge–Te based non-volatile frequency multiplication

〇(DC)Yifei Yin¹, Chihiro Uchida¹, Keito Tsukamoto¹, Hitoshi Hayashi¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

Keywords:CBRAM, non-volatile frequency multiplication, Ag-GeTe

The phenomenon that active metal ions such as Ag move in amorphous chalcogenide via an electrochemical reaction has been studied not only as an interesting physical phenomenon but also for a wide range of applications such as sensors and CBRAM. The electrochemical process inherently exhibits nonlinear current-voltage (I–V) characteristics. We have evaluated frequency multiplication characteristics, using Ge(Sb)Te thin films. This time, we show the endurance characteristics of the non-volatile frequency-multiplied memory device and the retention measurement results under the application of microwaves in a high temperature environment.