[23a-F408-1~9] 16.1 基礎物性・評価・プロセス・デバイス

▼ [23a-F408-5] Pulsed Laser Induced Phase Transition in N-incorporated Cr₂Ge₂Te₆ Film

〇Yi Shuang¹、Shogo Hatayama²、Daisuke Ando²、Yuji Sutou^1,2 (1.Tohoku Univ. (AIMR)、2.Tohoku Univ, (Eng))

キーワード：Phase change memory, Optical phase change, N incorporated Cr2Ge2Te6