[23a-F408-1~9] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[23a-F408-9] Polymorphic transformation behavior in thermal strained MnTe semiconductor film

〇Shunsuke Mori¹, Yinli Wang¹, Daisuke Ando¹, Fumio Narita², Yuji Sutou^1,3 (1.Tohoku Univ. (Eng.), 2.Tohoku Univ. (Environ.), 3.AIMR)

Keywords:Semiconductor film, Polymorphic transformation, Thermal stress

A MnTe semicondutor film shows drastic changes in physical properties via polymorphic transformation between NiAs- and wurtzite-type structure, which is expected to develop the fast and low power operation in nonvolatile memory. In this study, we will present a result about stress control of polymorphs as an key force to stablize these crystal structures.