[23p-E106-1~19] 13.9 化合物太陽電池

▼ [23p-E106-10] Al_0.35GaAs/InGaP Heterojunction Solar Cell Based on Temperature Graded Growth

〇Gan Li¹、Hassanet Sodabanlu²、Kentaroh Watanabe²、Yoshiaki Nakano¹、Masakazu Sugiyama^1,2 (1.The Univ. of Tokyo、2.RCAST)

キーワード：III-V compounds solar cell, MOVPE, AlGaAs

Al_0.35GaAs/InGaP solar cell has promising performace as a top cell in III-V compound multi-junction solar cell. However, it is difficult to grow high-quality Al_0.35GaAs/InGaP heterojunction with MOVPE since the prefferable growth temperatures are different for the two materials. This research proposes a temperature graded growth method to prevent defects in the interface and reaches ~0.2V higher open-circuit voltage for the solar cell grown.