[23p-E106-1~19] 13.9 Compound solar cells

[23p-E106-8] Effects of proton/electron irradiation on photovoltaic properties for
phosphorus-based dilute nitride solar cell

〇Keisuke Yamane¹, Ohshima Takeshi², Tetsuya Nakamura³, Mitsuru Imaizumi³, Akihiro Wakahara¹ (1.Toyohashi Tech., 2.QST, 3.JAXA)

Keywords:Diluted-nitride semiconductor, Proton irradiation, Solar cell

This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III-V materials such as GaAs and InGaP generally degrade their crystal quality by irradiation damage. We investigated the mechanism by the first principle study and experimental results.