Near-bandgap optical characterization of Al1-xInxN alloys grown on a sapphire substrate by using spectroscopic ellipsometry

Hayata Toyoda, Yuto Murakami, Rino Miyata, Daichi Imai, Takao Miyajima, Makoto Miyoshi, Tetsuya Takeuchi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23p-E202-1~14] 15.4 III-V-group nitride crystals

Wed. Mar 23, 2022 2:15 PM - 6:15 PM E202 (E202)

Kazunobu Kojima(Osaka Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

5:45 PM - 6:00 PM

[23p-E202-13] Near-bandgap optical characterization of Al_1-xIn_xN alloys grown on a sapphire substrate by using spectroscopic ellipsometry

〇Hayata Toyoda¹, Yuto Murakami¹, Rino Miyata¹, Daichi Imai¹, Takao Miyajima¹, Makoto Miyoshi², Tetsuya Takeuchi¹ (1.Meijo Univ., 2.Nagoya Inst. of Tech.)

Keywords:AlInN, spectroscopic ellipsometry

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Presentation information

[23p-E202-1~14] 15.4 III-V-group nitride crystals

[23p-E202-13] Near-bandgap optical characterization of Al1-xInxN alloys grown on a sapphire substrate by using spectroscopic ellipsometry

[23p-E202-13] Near-bandgap optical characterization of Al_1-xIn_xN alloys grown on a sapphire substrate by using spectroscopic ellipsometry