Below bandgap optical absorption processes of Al<sub>1-x</sub>In<sub>x</sub>N thin films grown on a sapphire substrate

Yuto Murakami, Hayata Toyoda, Kazutoshi Kubo, Kyosuke Masaki, Daichi Imai, Takao Miyajima, Makoto Miyoshi, Tetsuya Takeuchi

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[23p-E202-1~14] 15.4 III-V-group nitride crystals

Wed. Mar 23, 2022 2:15 PM - 6:15 PM E202 (E202)

Kazunobu Kojima(Osaka Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

6:00 PM - 6:15 PM

[23p-E202-14] Below bandgap optical absorption processes of Al_1-xIn_xN thin films grown on a sapphire substrate

〇Yuto Murakami¹, Hayata Toyoda¹, Kazutoshi Kubo¹, Kyosuke Masaki¹, Daichi Imai¹, Takao Miyajima¹, Makoto Miyoshi², Tetsuya Takeuchi¹ (1.Meijo Univ, 2.Nagoya Inst. of Tech)

Keywords:AlInN alloys, Photothermal deflection spectroscopy

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Presentation information

[23p-E202-1~14] 15.4 III-V-group nitride crystals

[23p-E202-14] Below bandgap optical absorption processes of Al1-xInxN thin films grown on a sapphire substrate

[23p-E202-14] Below bandgap optical absorption processes of Al_1-xIn_xN thin films grown on a sapphire substrate