[23p-E204-1~13] 6.3 Oxide electronics

[23p-E204-10] XPS Evaluation of ALD-TiO₂ layer for perovskite/Si tandem solar cell application

〇Hiroshi Nohira¹, Yoshiharu Kirihara², Ryota Tsujiguchi², Ryo Koyama¹, Kazuyoshi Nakada³, Ryousuke Ishikawa^1,3 (1.Tokyo City Univ., 2.Tokyo City Univ. GS, 3.Tokyo City Univ. ARL)

Keywords:ALD, TiO2, XPS

The titanium oxide layer used as the electron transport layer of the perovskite solar cell was formed by the atomic layer deposition method (ALD), which enables the deposition of high-quality films at low temperatures. Using the sample, changes in the TiO₂ layer due to annealing at 200, 250, and 300 ° C in vacuum were investigated using X-ray photoelectron spectroscopy. As a result, a decrease in trivalent Ti and Ti-OH components was observed by annealing at 300 °C.