14:45 〜 15:00
▲ [23p-E204-6] Electrical control of two-terminal protonic device using an amorphous WO3 thin film
キーワード：Oxide Semiconductor, Electrical Control, Protonic Device
Being the smallest ion, Proton (H+) could be a promising candidate among other ions to design low power consumption, high speed, and enhanced endurance neuromorphic devices [1]. The transport of protons into a solid could result in the change of its conductance [2]. There are two types of conductance change mechanism reported (i) conducting filament mechanism [3] and (ii) phase change mechanism [4]. However, to circumvent the issues of power consumption in a neuromorphic device, successful voltage control of proton distribution and subsequent conductance change should be verified. In this concern, we chose WO3 as proton transport host because it is a semiconductor (Band Gap ≈ 2.8-3.2 eV) in its undoped state. Its conductivity could be tuned by proton diffusion due to accompanied filling of electrons into the conduction band.