Enhanced magnetoresistance in a Ge-based all-epitaxial single-crystalline spin-valve device with a short channel

Shun Tsuruoka, Yuriko Tadano, Le Duc Ahn, Masaaki Tanaka, Shinobu Ohya

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

[23p-E205-1~18] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

Wed. Mar 23, 2022 1:30 PM - 6:30 PM E205 (E205)

Jun Okabayashi(Univ. of Tokyo), Hiroshi Katayama-Yoshida(Univ. Tokyo), Eisuke Abe(Riken)

4:30 PM - 4:45 PM

△ [23p-E205-12] Enhanced magnetoresistance in a Ge-based all-epitaxial single-crystalline spin-valve device with a short channel

〇Shun Tsuruoka¹, Yuriko Tadano¹, Le Duc Ahn¹, Masaaki Tanaka^1,2, Shinobu Ohya^1,2 (1.The Univ. Tokyo, 2.The Univ. Tokyo CSRN)

Keywords:spintronics, spin-valve

In this study, toward the realization of spin MOSFET, we fabricated a spin-valve device structure with a channel length of 68 nm for an all-epitaxial heterostructure consisting of Co/Fe/MgO/Ge:B/Ge(001) substrates to enhance the magnetoresistance ratio (MR ratio). The MR ratio of up to 0.55 % was obtained at 3 K, which is about 1000 times higher than the value predicted by the diffusive model, indicating that the MR ratio can be enhanced by reducing the channel length to 68 nm.