[23p-E205-1~18] 10.4 半導体・トポロジカル・超伝導・強相関スピントロニクス

▼ [23p-E205-13] Growth of topological Dirac semimetal α-Sn / ferromagnetic semiconductor (In,Fe)Sb heterostructures and observation of quantum oscillations

〇Tomoki Hotta¹、Le Duc Anh^1,2,3、Masaaki Tanaka^1,4 (1.EEIS, Univ. of Tokyo、2.IEI, Univ. of Tokyo、3.PRESTO, JST、4.CSRN, Univ. of Tokyo)

キーワード：topological Dirac semimetal, ferromagnetic semiconductor, quantum oscillation

In this study, we have grown topological Dirac semimetal (TDS) α-Sn / ferromagnetic semiconductor (FMS) (In_1-x,Fe_x)Sb heterostructures. The sample structure consists of (from top to bottom) α-Sn (2 nm) / (In_1-x,Fe_x)Sb. (x = 13.8%, 10 nm) / InSb buffer (100 nm) / undoped InSb (001) substrate, grown by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) lattice image indicates that α-Sn with diamond-type crystal structure is epitaxially grown on (In_1-x,Fe_x)Sb. Magnetic circular dichroism (MCD) hysteresis at a photon energy of 2 eV under a magnetic field applied perpendicularly to the film indicates the presence of room-temperature intrinsic ferromagnetism in the (In_1-x,Fe_x)Sb layer. Derivative of Hall resistance about the magnetic field (dR_xy/dB) measured by Hall measurements up to 14 T clearly shows Shubnikov-de Haas oscillation and we get non-zero Berry phase (β = 0.375) by the Fan plot analysis of the conductivity, indicating that the α-Sn layer is topologically non-trivial. These results indicate successful growth of the TDS α-Sn / FMS (In_1-x,Fe_x)Sb heterostructure.