[23p-E205-1~18] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

▲ [23p-E205-14] Non-reciprocal magnetotransport properties of α-Sn/(In,Fe)Sb magnetic topological bilayers

〇Anh Duc Le^1,2,3, Tomoki Hotta¹, Subaru Ubukata¹, Masaaki Tanaka^1,4 (1.Dept. of Electrical Engineering and Information Systems, Tokyo Univ., 2.Institute of Engineering Innovation, Tokyo Univ., 3.PRESTO, JST, 4.CSRN, Tokyo Univ.)

Keywords:ferromagnetic semiconductor, Topological semimetal, Nonreciprocal transport

Among many topological materials, α-Sn stands out as a unique and promising candidate. Recently, we have successfully grown α-Sn topological Dirac semimetal thin films on InSb (001) using molecular beam epitaxy (MBE). In these α-Sn thin films, very high quantum mobilities of both the topologically non-trivial bulk (1800 cm²/Vs) and surface states (30000 cm²/Vs) were obtained for the first time, which are promising for various topological physics and devices. In this work, we study magnetotranport properties of α-Sn thin films grown on ferromagnetic semiconductor (FMS) (In,Fe)Sb layers. When an in-plane magnetic field B is applied parallel to the current I, the magnetically proximitized α-Sn thin film shows very large linear magnetoresistances that are odd-functions of B. Furthermore, a nonreciprocal magnetoresistance component R_{Iodd_Bodd}, which is an odd function of both B and I, is also observed. These novel magnetotransport properties are considered to originate from the breaking of spatial inversion symmetry and time reversal symmetry in the α-Sn/(In_1-x,Fe_x)Sb heterostructures.