[23p-E205-1~18] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

[23p-E205-2] Ferromagnetism modulation by ultralow current in two dimensional polycrystalline molybdenum di-sulfide atomic layered structure

〇Iriya Muneta¹, Takanori Shirokura¹, Pham Nam Hai¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

Keywords:two-dimensional layered semiconductor, Ferromagnetism modulation

We measure magnetoresistance in wide current range in molybdenum di-sulfide layered polycrystal deposited by sputter. We find that the curve shape of magnetic field dependence of magnetoresistance is changed variously according to current. This is thought to be because of charge trap accumulation at the grain boundaries by current, and because of the current-induced effective magnetic field by spin-orbit interaction. Since the current density order of the change of magnetoresistance is much lower than MTJ, we feel possibility.