[23p-E205-1~18] 10.4 Spintronics in semiconductor, topological material, superconductor, and multiferroics

▼ [23p-E205-9] Electron spin polarization in a n⁺-Si channel: Analysis with the band diagram
in ferromagnetic Fe/Mg/amorphous-MgO/SiO_x/n⁺-Si(001) tunnel junctions

〇(M2)Baisen Yu¹, Shoichi Sato^1,2, Masaaki Tanaka^1,2, Ryosho Nakane¹ (1.UTokyo, 2.CSRN)

Keywords:Semiconductor Spintronics, Silicon, Spin polarization

The purpose of this study is to develop a unified model that can well explain the physical origins of P_inj and P_det, based on the band diagram in a Fe-based ferromagnetic tunnel junction on n⁺-Si (001).
Our model can explain the feature at any V_JD and V_JS, which concludes that P_inj and P_det originate from the band diagram of the ferromagnetic tunnel junction without the spin filter. The spin conduction mechanism and decreases of P_inj and P_det at higher biases are analogous to the tunnel magnetoresistance with ferromagnetic metals, but we found that the electron charge accumulation at the Si surface plays an important role.