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[23p-E205-9] Electron spin polarization in a n+-Si channel: Analysis with the band diagram
in ferromagnetic Fe/Mg/amorphous-MgO/SiOx/n+-Si(001) tunnel junctions
キーワード：Semiconductor Spintronics, Silicon, Spin polarization
The purpose of this study is to develop a unified model that can well explain the physical origins of Pinj and Pdet, based on the band diagram in a Fe-based ferromagnetic tunnel junction on n+-Si (001).
Our model can explain the feature at any VJD and VJS, which concludes that Pinj and Pdet originate from the band diagram of the ferromagnetic tunnel junction without the spin filter. The spin conduction mechanism and decreases of Pinj and Pdet at higher biases are analogous to the tunnel magnetoresistance with ferromagnetic metals, but we found that the electron charge accumulation at the Si surface plays an important role.
Our model can explain the feature at any VJD and VJS, which concludes that Pinj and Pdet originate from the band diagram of the ferromagnetic tunnel junction without the spin filter. The spin conduction mechanism and decreases of Pinj and Pdet at higher biases are analogous to the tunnel magnetoresistance with ferromagnetic metals, but we found that the electron charge accumulation at the Si surface plays an important role.