[23p-E206-1~13] 12.4 Organic light-emitting devices and organic transistors

[23p-E206-4] Mobility Difference Between Electron and Hole in Organic Semiconductors and Its Microscopic Origin

〇Hiroyuki Ishii¹, Hiroyuki Yoshida^2,3, Nobuhiko Kobayashi¹ (1.Univ. of Tsukuba, 2.GSE Chiba Univ., 3.MCRC Chiba Univ.)

Keywords:organic semiconductors, charge transport simulation, polaron

The electron mobility of organic semiconductors is one order of magnitude lower than the hole mobility. Therefore, increasing of electron mobility of organic semiconductors is strongly required. In order to develop such materials, a microscopic understanding of the charge (electron and hole) transport mechanisms is essential. In this presentation, we will propose our new polarons and dynamical disorder unified model. Using the time-dependent wavepacket diffusion method based on the model, we systematically investigate the transport mechanism of n-type organic semiconductors such as PDI and NDI, and p-type organic semiconductors such as DNTT and DNBDT. We will discuss microscopic origin of reduction of the electron mobility.