[23p-E302-1~18] CS.9 Code-sharing Session of 13.7 & 15.6

[23p-E302-8] Reverse leakage current due to band-to-band tunneling in dislocation-free GaN pn junctions

〇Tetsuo Narita¹, Tomoyuki Shoji¹, Yoshitaka Nagasato², Masakazu Kanechika³, Takeshi Kondo³, Tsutomu Uesugi³, Kazuyoshi Tomita³, Satoshi Ikeda², Tomohiko Mori¹, Satoshi Yamaguchi¹, Yasuji Kimoto¹, Jun Kojima³, Jun Suda³ (1.Toyota CRDL., 2.MIRISE Technologies, 3.Nagoya Univ.)

Keywords:nitride semiconductor, p-n junction, power device

We demonstrate that the reverse leakage current in the nearly-dislocation-free GaN p-n junctions is dominated by the band-to-band tunneling (BTBT) current. The BTBT reverse leakage current is below the detection limit of measurements for 1000 V-class p-n junctions, indicting that the BTBT current is negligible small in the practical use of high-voltage GaN devices.