[23p-E307-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23p-E307-12] Width Dependence of Characteristics of Silicon Nanowire Transistors at Room and Low Temperatures

〇(M2)Yuto Yamanaka¹, Mizutani Tomoko¹, Saraya Takuya¹, Kobayashi Masaharu¹, Hiramoto Toshiro¹ (1.Tokyo Univ.)

Keywords:semiconductor, silicon nanowire transistor