[The 13th Silicon Technology Division Young Researcher Award] Ferroelectric properties of room-temperature sputter-deposited AlScN films

Sung-Lin TSAI, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[23p-E307-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Wed. Mar 23, 2022 1:30 PM - 7:00 PM E307 (E307)

Kazuhiko Endo(AIST), Masahiro Hori(静大)

2:30 PM - 2:45 PM

▲ [23p-E307-4] [The 13th Silicon Technology Division Young Researcher Award] Ferroelectric properties of room-temperature sputter-deposited AlScN films

〇Sung-Lin TSAI¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech., 2.Tokyo Tech. IIR)

Keywords:Ferroelectric, AlScN, sputter

Ferroelectricity in Al_1-xSc_xN films has been reported in 2019 with a large remanent polarization of over 100 uC/cm². Many kinds of research, including deposition, characteristics, and reliability, have been conducted so far. In this presentation, we will show the ferroelectricity of room-temperature deposited Al_0.78Sc_0.22N films.