[23p-E307-1~20] 13.5 デバイス／配線／集積化技術

▲ [23p-E307-4] [The 13th Silicon Technology Division Young Researcher Award] Ferroelectric properties of room-temperature sputter-deposited AlScN films

〇Sung-Lin TSAI¹、Takuya Hoshii¹、Hitoshi Wakabayashi¹、Kazuo Tsutsui²、Kuniyuki Kakushima¹ (1.Tokyo Tech.、2.Tokyo Tech. IIR)

キーワード：Ferroelectric, AlScN, sputter

Ferroelectricity in Al_1-xSc_xN films has been reported in 2019 with a large remanent polarization of over 100 uC/cm². Many kinds of research, including deposition, characteristics, and reliability, have been conducted so far. In this presentation, we will show the ferroelectricity of room-temperature deposited Al_0.78Sc_0.22N films.