[23p-P03-1~3] 3.15 Silicon photonics and integrated photonics

[23p-P03-1] Change of Internal Defects in Nanocavity Silicon Raman Laser by Annealing

〇(M1)Shunsuke Ikuta¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Nano Cavity Silicon Raman Laser, near-infrared low-temperature cathodoluminescence measurements, Anneal

Previously, we reported the evaluation of internal defects in SOI substrates by near-infrared low-temperature cathodoluminescence (CL) measurements. The D1 (1530 nm) and D2 (1420 nm) emission peaks related to dislocation defects were observed in the optical communication wavelength band, and the defects were found to be reduced by annealing. These defect peaks may be the cause of Q_abs. In this paper, we report the relationship between the Q_exp values and CL spectra of nanocavities fabricated under different annealing conditions.