[23p-P07-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[23p-P07-6] Excitation Power Dependence of Emission Lines from Er Doped GaAs

〇Shunpei Ito¹, Kengo Takamiya¹, Masataka Kobayashi², Shuhei Yagi¹, Hidefumi Akiyama², Hiroyuki Yaguchi¹ (1.Saitama Univ., 2.ISSP, Univ. Tokyo)

Keywords:optical characterization, rare-earth doped material