16:00 〜 18:00
▲ [23p-P10-22] PEDOT:PSS/2D WS2-xSex/n-Si Heterojunction Solar Cells
キーワード：2D WS2-xSex, PEDOT:PSS, Heterojunction Solar Cells
The TMDCs such as MoS2 and WSe2 have been extensively owing to unique carrier transport properties through the interface and defect engineering of TMDCs by tuning the S/Se compositional ratio, the number of stack layer, chemical doping, and work function of metal contact. So far, we have studied the PEDOT:PSS/n-Si heterojunction solar cells and the junction property the junction property at the PEDOT:PSS/n-Si is explained in terms of p+ -n junction. In this paper, we present the carrier transport property of PEDOT: PSS coated (2D) transition metal dichalcogenides (TMDCs) WS2-xSex and WS2-xSex/WO3-x p-n junctions formed between source/drain (S/D) electrodes in the dark and under light exposure using field-effect transistors (FETs). The Ids was increased by 1.6 times for PEDOT:PSS cap layer coated FETs near both S/D electrodes. These results originate from the enhanced hole injection ability from Pt S/D electrodes to WS2-xSex layer through PEDOT:PSS layer. Similar results were also observed at the WOx/WS2-xSex/th-SiO2/p+-Si FETs. We will discuss the dark- and photo-generated carrier transport in the WOx/WS2-xSex/th-SiO2/p+-Si and WS2-xSex /n-Si interface.