[23p-P12-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[23p-P12-11] Formation of a transparent conductive film with low fluorescence intensity

〇Masataka Shugo¹, Maki Shimizu¹, Yasuto Hijikata¹, Shinya Aikawa², Shun Mori² (1.Saitama Univ., 2.Kogakuin Univ.)

Keywords:transparent conductive film, indium tin oxide, Diamond Nitrogen-Vacancy Center

In recent years, the demand for the measurement of NV centers under conductive films has been increasing for the control of the charge of NV centers and for the application of microwaves, but if the transparent conductive film itself emits light, it is blended with the fluorescence of NV centers, making the measurement difficult. However, if the transparent conductive film itself emits light, it will be confused with the fluorescence of the NV center, making the measurement difficult. In this study, we investigated the deposition conditions for ITO and Indium Oxide, which is the base material of ITO, to obtain low fluorescence intensity.
As a result, when the oxygen partial pressure was increased, the fluorescence intensity became lower, but the resistivity became higher. In addition, the films without annealing were found to be suitable for this purpose.