[23p-P12-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[23p-P12-2] STM observation of Ni-induced structure on beta-Ga₂O₃(-201) surface

〇(B)Ririko Takemoto¹, Arifumi Okada¹, Kohei Kadono¹ (1.Kyoto Inst. Tech.)

Keywords:gallium oxide, stm observation, Ni deposition

Wide-gap semiconductor β-Ga₂O₃ is a candidate material for the next-generation power device due to its remarkable properties such as high breakdown field. However, p-type conduction of this material is hard to achieve owing to its electronic structure. One approach to implement the β-Ga₂O₃-based device structure is to grow another material to be p-type layer on the β-Ga₂O₃ substrate. In order to prepare defect-free interface between the substrate and the layer to grow, it is important to understand the initial stage of the growth. In this study, we focused on the initial stage of NiO growth on β-Ga₂O₃ surface. Here we investigate the structure of Ni/β-Ga₂O₃(-201) as a starting model system. Ni deposition was performed using an electron beam evaporator. The step and terrace structure on the surface and the stripe structure on the terraces did not change through Ni deposition with low coverage. The deposited Ni was observed as particles with the diameters of 1 nm order.