[24a-D113-1~5] 8.5 Plasma phenomena, emerging area of plasmas and their new applications

[24a-D113-2] Low-energy ion beam induced CVD for the formation of silicon oxide and silicon nitride

〇Satoru Yoshimura¹, Satoshi Sugimoto¹, Takae Takeuchi², Masato Kiuchi¹ (1.Osaka Univ., 2.Nara Women's Univ.)

Keywords:silicon oxide, silicon nitride, ion

We proposed an experimental methodology for producing SiO and SiN films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane, hexamethyldisilane, or TEOS as a source material. In this study, both source gas and ion beam were simultaneously injected onto a Si substrate. We selected O⁺ and N⁺ as the ion beam. The energy of the ion beam was 101 eV. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS).