[24a-E102-1~10] 17.3 層状物質

▼ [24a-E102-2] Epitaxial Growth of MoS₂ on Sapphire (c-Al₂O₃) by MOCVD

〇(D)Myeongok Kim^1,2、Nazmul Ahsan²、Nicholas Trainor³、Chen Chen³、Dorota Kowalczyk⁴、Joan Redwing³、Yoshitaka Okada^1,2 (1.Eng. UTokyo、2.RCAST UTokyo、3.Penn. State Univ.、4.Lodz Univ.)

キーワード：MOCVD, MoS2, Sapphire substrate

For optoelectronic device applications of transition metal dichalcogenides, it is critical to understand their growth mechanism. This research studies the epitaxial growth of MoS₂ on sapphire substrate by MOCVD. Films grown for different time were characterized by in-plane XRD, AFM, and Raman spectroscopy. In-plane XRD at (110) plane shows epitaxial relations between MoS₂ and sapphire throughout the entire growth process from the early stage characterized by uncoalesced triangle domain to the later stage with coalesced terrace structure. Raman peak shift of A_1g mode confirms the increased thickness with longer growth time. The height of MoS₂ triangle domain corresponds to that of MoS₂ from AFM results. The step height of the terrace structure, however, does not correspond to the thickness of MoS₂. This may attribute to the distortion of the sapphire substrate during the growth at high temperature under hydrogen atmosphere.