[24a-E102-1~10] 17.3 Layered materials

[24a-E102-5] Synthesis and Thin Film Formation of WS₂ by Simple Thermal CVD Method

〇Fumitaka Ohashi¹, Kazuma Shirai², Shunsuke Sugai², Kazushi Sekiya¹, Kumar Rahul¹, Himanshu Jha¹, Tetesuji Kume^1,2 (1.Gifu Univ., 2.Graduate School, Gifu Univ.)

Keywords:semiconductor, 2D material, transition metal dichalcogenide

Transition metal dichalcogenide (TMDC) usually have a semiconductive properties and arose great attentions for the gas sensor and electric devices because of the 2D structure and high carrier mobilities. The materials are generally prepared using thermal chemical vapor depositions and atomic layer deposition method. However, these methods typically result in the difficulty to apply the materials to devices because they involve vacuum apparatus with high cost and high temperature process. In our research, we prepared WS₂ using a simple thermal CVD method with small stainless chamber which enables the fabrication of the materials with low cost and simple process.