[24a-E202-1~10] 15.4 III-V族窒化物結晶

▼ [24a-E202-6] Structural Analysis on OVPE GaN by Nanobeam X-ray Diffraction

〇Zhendong WU¹、Yudai Nakanish¹、Yusuke Hayashi¹、Tetsuya Tohei¹、Junichi Takino²、Yasuhiko Imai³、Kazushi Sumitani³、Shigeru Kimura³、Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ.、2.Panasonic Corp.、3.JASRI)

キーワード：OVPE GaN, nanoXRD, crystal structure

OVPE-GaN has attracted attention due to its low dislocation density, low resistance. In the OVPE method, researchers have verified that the 3D growth mode promotes the high carrier concentration and dislocation convergence, of which, however, the corresponding crystal structure lacks investigation. In recent years, we have developed research methods on nanobeam X-ray diffraction to extract crystal growth and lattice structure information by mapping the crystal structure and investigating the local structure characteristics. This research tried to classify the structural characteristics directly from XRD patterns obtained around the center of converged dislocation. Interestingly, most converged dislocations contain a-component of Burgers vector. More detailed analytical results, including the TEM images, will be shown in the presentation.