The 69th JSAP Spring Meeting 2022

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[24a-E204-1~8] 6.3 Oxide electronics

Thu. Mar 24, 2022 9:30 AM - 11:45 AM E204 (E204)

Hisashi Shima(AIST), Yusuke Nishi(Kyoto Univ.)

9:30 AM - 9:45 AM

[24a-E204-1] Evaluation of Donor Concentrations at the Interface of PtOx/ZnO Schottky Contacts
and Investigation of their Origins

〇(M2)Mikiya Matsumura1, Takahisa Tanaka1, Ken Uchida1 (1.Tokyo Univ.)

Keywords:ZnO, Schottky diodes, donors

In this study, Schottky diodes were fabricated on ZnO single crystal by depositing PtOx, which is one of the noble metal oxide. Carrier concentration in ZnO single crystal was evaluated using the Hall effect measurement. The donor concentration in the PtOx/ZnO interface and its origins were was also investigated by the capacitance-voltage characteristics and capacitance transient characteristics. By comparing the donor concentration in bulk with the donor concentration in the interface, it was revealed that the latter is higher.