Resistance change behavior under voltage pulses of TiN/Hf/HfO<sub>2</sub>/Au/ HfO<sub>2</sub>/ TiN -device

Chuanyang Huang, Masakazu Tanaka, Rintaro Hatanaka, Tomohiro Shimizu, Takeshi Ito, Shoso Shingubara

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[24a-E204-1~8] 6.3 Oxide electronics

Thu. Mar 24, 2022 9:30 AM - 11:45 AM E204 (E204)

Hisashi Shima(AIST), Yusuke Nishi(Kyoto Univ.)

11:15 AM - 11:30 AM

[24a-E204-7] Resistance change behavior under voltage pulses of TiN/Hf/HfO₂/Au/ HfO₂/ TiN -device

〇(M1)Chuanyang Huang¹, Masakazu Tanaka², Rintaro Hatanaka¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Graduate School of Science and Engineering,Kansai Univ., 2.Kansai Univ.)

Keywords:Resistive Switching Device

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Presentation information

[24a-E204-1~8] 6.3 Oxide electronics

[24a-E204-7] Resistance change behavior under voltage pulses of TiN/Hf/HfO2/Au/ HfO2/ TiN -device

[24a-E204-7] Resistance change behavior under voltage pulses of TiN/Hf/HfO₂/Au/ HfO₂/ TiN -device