[24a-E205-1~11] 9.4 Thermoelectric conversion

[24a-E205-2] Effect of oxygen on the formation of Si vacancy defects in Mg₂Si single crystal

〇Kei Hayashi¹, Sota Kawamura², Yusuke Hashimoto², Noboru Akao¹, Zhicheng Huang¹, Wataru Saito¹, Kaichi Tasaki¹, Koichi Hayashi³, Tomohiro Matsushita², Yuzuru Miyazaki¹ (1.Tohoku Univ., 2.NAIST, 3.Nagoya Inst. Tech.)

Keywords:thermoelectric materials, point defects