[24p-D214-1~11] 3.16 Optics and Photonics English Session

▼ [24p-D214-1] 110℃ high temperature operation of GaInAsP/Si membrane DFB Laser bonded by a-Si nano-film assisted surface activated bonding

〇(D)Weicheng Fang¹, Naoki Takahashi¹, Ruihao Xue¹, Shunto Katsumi¹, Yoshitaka Ohiso¹, Tomohiro Amemiya^1,2, Nobuhiko Nishiyama^1,2 (1.Tokyo Tech, 2.IIR)

Keywords:semiconductor membrane laser, thermal resistance, surface activated bonding

The optical interconnection can be the promising solution to replace electrical global wiring in Si-LSIs. We proposed the InP-based photonic integrated circuit with semiconductor membrane lasers integrated with Si-substrate using benzocyclobutene (BCB) adhesive wafer bonding. However, high thermal resistance of membrane laser hindered high temperature continuous-wave (CW) operation because of BCB bonding layer. In this report, we introduced a-Si nano-film assisted surface activated bonding (SAB) to realize a BCB-free membrane lasers and Bragg wavelength detuning was also used to enhance the high temperature operation characteristic of membrane laser.