[24p-E103-1~17] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[24p-E103-11] Mo contact to the laser-crystallized (100)-oriented grain-boundary free Si film

〇Nobuo Sasaki^1,2, Satoshi Takayama², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:TFT, laser crystallization, grain-boundary

We studies Mo contact resistance of the Si film with the distance of the fabricated contact pattern from the (100)-oriented grain-boundary free Si region in the cw laser crystallization.