5:00 PM - 5:15 PM
[24p-E103-14] Crystallization of a-Si Films deposited by RF Sputtering using Blue Direct Diode Laser (Part2)
Keywords:laser annealing, Blue laser, Polysilicon
This study has developed and tested a blue diode-laser light source that can achieve a beam parameter product (BPP) of less than 2mm mrad and features a high power density using a wavelength beam combining (WBC) technology while a blue laser stands out as a light source for a copper welding or cutting in terms of its high absorption rate.
It has been reported that a-Si film is successfully crystallized by a blue laser beam with the Si surface remained smooth after the beam irradiation. Furthermore, only changing a laser irradiation energy density allows for production of fine crystal grains which range from 10 nm to a few hundred nm in diameter, and which grow by more than a few micrometers in a laser beam irradiation direction.
In this experiment, a blue direct diode-laser beam developed using a WBC technology was stretched in a single axis to form a straight laser beam (100 μm×50 mm) which was used for irradiation onto a-Si film. This was designed for the purpose of realizing the mass production and a uniform surface.
It has been reported that a-Si film is successfully crystallized by a blue laser beam with the Si surface remained smooth after the beam irradiation. Furthermore, only changing a laser irradiation energy density allows for production of fine crystal grains which range from 10 nm to a few hundred nm in diameter, and which grow by more than a few micrometers in a laser beam irradiation direction.
In this experiment, a blue direct diode-laser beam developed using a WBC technology was stretched in a single axis to form a straight laser beam (100 μm×50 mm) which was used for irradiation onto a-Si film. This was designed for the purpose of realizing the mass production and a uniform surface.