[24p-E103-1~17] 13.4 Si系プロセス・Si系薄膜・MEMS・装置技術

▲ [24p-E103-2] [Highlight]Development of automatic 3D temperature imaging technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

〇Jiawen Yu¹、Keiya Fujimoto¹、Kotaro Matsuguchi¹、Takuma Sato¹、Hiroaki Hanafusa¹、Seiichirou Higashi¹ (1.Hiroshima Univ.)

キーワード：3D temperature imaging, ultra-rapid thermal annealing, SiC wafer

In previous work, our laboratory developed a temperature measurement technique OICT^[1] with high time resolution and temperature resolution. However, it takes about 1 to 3 hours or even more to obtain the 3D temperature distribution of substrates during millisecond thermal-plasma-jet (TPJ) annealing depending on the experience of users. In this work, on the basis of OICT, we are going to develop an automatic 3D temperature imaging technique that can obtain all the temperature information of the SiC wafer at every moment during ultra-rapid thermal annealing (URTA) within a very short time and does not depend on user’s proficiency.