[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

△ [24p-E105-1] The film-thickness dependence of polarization-reversal dynamics in HfO₂-based ferroelectrics

〇(M2)Yoshiki Sawabe¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, Univ. Tokyo, 2.d.lab, Univ. Tokyo)

Keywords:ferroelectric memory, HfO2-based ferroelectrics

HfO₂-ferroelectric memory is a promising candidate in the memory market, where demand is increasing in terms of low power consumption and large capacity. For the application of this ferroelectric material, it is important to understand and optimize the dynamic characteristics of polarization-reversal. In this study, we quantitatively evaluate the film-thickness dependence of the dynamics characteristics in HfO₂-based ferroelectric capacitors, and show the effect on the device.