[24p-E105-1~13] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

△ [24p-E105-4] Effects of Hf_xZr_1-xO₂ ferroelectrics/Ge MFIS interfaces on the polarization reversal behavior

〇Koichiro Iwashige¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo Univ.)

Keywords:Ge, insulator, ferroelectric

In the P-V measurement of MFIS capacitors with fast sweeping, it is usually known that the electric field is hardly applied to the ferroelectric material and polarization reversal does not occur on the low concentration substrate. However, in this study, ferroelectric properties were observed in low-concentration HZO/Ge MFIS capacitors only when the interfacial properties were poor. Therefore, we propose a model in which the electric field is applied to the ferroelectric material by the response of the charge at the interface level, and verify the validity of the model by investigating the temperature dependence of the P-V measurement.