[24p-E202-9~17] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [24p-E202-16] Evaluation of Device Size and Array Resistance Dependence in Read Disturbance Reduction Effect by Bi-directional Read SOT-MRAM

〇Yuwa Kishi¹、Akihiro Yamada¹、Mengnan Ke¹、Takayuki Kawahara¹ (1.Tokyo Univ. of Sci.)

キーワード：MRAM, Spin-Orbit Torque, magnetic memory

We propose a read-reliability model to construct a bi-directional stabilized spin-orbit-torque magnetoresistive random-access memory (SOT-MRAM) structure. Since this stabilized SOT-MRAM structure withstands magnetization switching with 10 times the current compared with the conventional SOT-MRAM structure, it enables low power-consumption operation while maintaining read reliability. We evaluated the effectiveness of the stabilized SOT-MRAM structure regarding disturbance reduction for various device shapes and found there were differences in this effectiveness because the behavior of magnetization switching differs depending on the shape and that vortex magnetization affects the stabilized SOT-MRAM structure. Considering the array configuration of the stabilized SOT-MRAM structure, the number of memory cells was limited to about 1000; therefore, a more optimal configuration is required.