[24p-E202-9~17] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [24p-E202-17] Magnetization Switching Behavior in Bi-directional Read of Spin Orbit Torque MRAM

〇Akihiro Yamada¹、Yuwa Kishi¹、Mengnan Ke¹、Takayuki Kawahara¹ (1.Tokyo Univ. of Sci.)

キーワード：MRAM, Spin-Orbit Torque

In spin orbit torque magnetic random-access memory, the magnetization of the free layer is erratically switched at the time of reading. We previously proposed a bi-directional read method as a solution to reduce this read disturbance. When the size dependence of the reduction effect in the X and Y directions was investigated with our method, different size dependences were obtained. In this study, including the elucidation of this behavior, we evaluated the behavior of magnetization switching with our bi-directional read method. As a result, the switching mechanism differs depending on the size, and the threshold current differs depending on whether the size changes in the magnetization direction or the current direction.