2:15 PM - 2:30 PM
▼ [24p-E206-4] Enhanced efficiency and stability in Sn-based perovskite solar cells by trimethylsilyl halide surface passivation
Keywords:Tin halide perovskite, Trimethylsilyl halide, Surface passivation
Lead free tin perovskite solar cells (PKSCs) is the most suitable alternative candidate for conventional lead perovskite solar cells. However, the efficiency and the stability are insufficient, mainly because of the poor film quality and numerous defects.
To suppress the formation of defects, several strategies have been reported. Such as use additives to suppress the formation of iodide vacancies. However, additives may trigger uncontrollable nucleation site. To overcome this drawback, several researches also make a second coating of excess halide ions on the perovskite film surface. Jin et al have coated the MACl solution to lead the secondary growth of the perovskite layer. Joker et al. have introduced Ga+ into FASnI3 to suppress the formation of iodide vacancies and passivate grain boundaries. Wang et al. have used Phenylhydrazine chloride (PHCl) to passivate the trap states of perovskite film for an enhanced Voc of 0.94V. What we learnt from the previous reports is that these additives have ionic characters.
Inspired by the above studies, we investigate the passivation of Tin-based perovskite using a new type of the reagent, trimethylsilyl halide (Me3SiX) having ionic characters of Me3Si+ and Br- with the hydrophobicity of the Me3Si moiety. As a result, the efficiency was enhanced from 10.05 % without DEAI to 12.22% after surface passivation.
To suppress the formation of defects, several strategies have been reported. Such as use additives to suppress the formation of iodide vacancies. However, additives may trigger uncontrollable nucleation site. To overcome this drawback, several researches also make a second coating of excess halide ions on the perovskite film surface. Jin et al have coated the MACl solution to lead the secondary growth of the perovskite layer. Joker et al. have introduced Ga+ into FASnI3 to suppress the formation of iodide vacancies and passivate grain boundaries. Wang et al. have used Phenylhydrazine chloride (PHCl) to passivate the trap states of perovskite film for an enhanced Voc of 0.94V. What we learnt from the previous reports is that these additives have ionic characters.
Inspired by the above studies, we investigate the passivation of Tin-based perovskite using a new type of the reagent, trimethylsilyl halide (Me3SiX) having ionic characters of Me3Si+ and Br- with the hydrophobicity of the Me3Si moiety. As a result, the efficiency was enhanced from 10.05 % without DEAI to 12.22% after surface passivation.