[24p-F308-1~11] CS.1 Code-sharing Session of 2.3 & 7.5

△ [24p-F308-3] Ultra-thinning of Si3N4 membrane by atomic layer etching using GCIB and evaluation of the pressure resistance

〇Masaya Takeuchi¹, Reki Fujiwara¹, Noriaki Toyoda¹ (1.Univ. of Hyogo)

Keywords:GCIB, XPS, Atomic layer etching

X-ray photoelectron spectroscopy (XPS) is a powerful technique to analyze the bonding state of molecules. When measuring solutions by XPS, an environmental cell with window of a thin SiN membrane is used to seal the solution in a vacuum and to propagate a photoelectron to the detector through the window. The detection sensitivity of photoelectrons can be improved by making the SiN membrane ultra-thin to a few nm. In this study, we perform atomic layer etching using GCIB to make the ultra-thin SiN membrane. In addition, we evaluate the pressure resistance of the membrane.