[24p-F407-1~17] 22.1 Joint Session M "Phonon Engineering"

[24p-F407-12] Heat transport mechanism in the amorphous GeS/ single-crystalline PbTe interface

〇Takafumi Ishibe¹, Masato Yoshiya², Seisuke Nakashima³, Akihiro Ishida³, Yoshiaki Nakamura¹ (1.Grad. School of Eng. Sci., 2.Grad. School of Eng., 3.Shizuoka Univ.)

Keywords:Interfacial thermal resistance, Amorphous, Chalcogenide

In recent years, there have been much effort to decrease the thermal resistance at the nanoscale interface in electronic device. Some studies are calculating the thermal resistance spcific to a certain interface. However, in the real system, it is difficult to predict the interfacial thermal resistance because the real interface possesses lattice strain, defect, etc. In this study, we are focusing on the amorphous/crystal interface with less lattice strain and defects due to no lattice mismatch. From both experimental and theoretical perspectives, this study will discuss the transport mechanism of heat through the amorphous/crystal interface using amorphous GeS/single-crystalline PbTe multilayers.