[24p-F407-1~17] 22.1 Joint Session M "Phonon Engineering"

△ [24p-F407-8] High performance nanophononic silicon thermoelectric devices with narrow neck sizes

〇Tomoki Nawae¹, Ryoto Yanagisawa¹, Patrick Ruther², Oliver Paul², Kentaro Furusawa³, Masahiro Nomura¹ (1.IIS Univ. of Tokyo, 2.MITEK Univ. of Freiburg, 3.NICT)

Keywords:Phononic crystal, Thermoelectric

We report the results of fabricating phononic crystal (PnC) nanostructures with narrow neck sizes on a 1.1 um-thick polycrystalline silicon to achieve low thermal conductivity. We observed a very low thermal conductivity of 1.01 Wm^-1K^-1 for PnC with a neck size of less than 10 nm. High internal resistance has been one of the issues for planar-type thermoelectric devices using silicon nanostructures with characteristic lengths of 100 nm or less. the PnC with 1.1 um-thick is expected to improve the performance of thermoelectric devices.