[24p-P03-1~9] 13.9 Compound solar cells

[24p-P03-1] Analysis of Photovoltaic Properties of GaAsPN Solar Cells Irradiated with Proton and Electron Beams

〇Kento Hirai¹, Keisuke Yamane¹, Takeshi Ohshima², Tetsuya Nakamura³, Mitsuru Imaizumi³, Akihiro Wakahara¹ (1.Toyohashi Univ.Tech, 2.QST, 3.JAXA)

Keywords:compound semiconductor solar cells

The optimization of the recombination center density is one of the most important issues to improve the efficiency of GaAsPN solar cells. Although it has been found experimentally that the amount of defects increases or decreases by radiation irradiation and RTA, no quantitative discussion has been made. Therefore, we estimated the change in the recombination center density of GaAsPN solar cells irradiated with protons and electrons by performing device simulations. As a conclusion, the recombination center density of the irradiated and RTA-treated samples decreased, which is an indicator for further improvement of the efficiency.