[24p-P04-1~9] 15.4 III-V-group nitride crystals

[24p-P04-5] RF-MBE Growth of High Al Composition AlGaN/AlN Quantum Wells and Evaluation of Their Emission Properties

〇(M1)Mahiro Hayasaki¹, Mari Hashimoto¹, Tomoya Yamaguchi¹, Tomohiro Yamaguchi¹, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ.)

Keywords:crystal growth, III-V semiconductor, AlGaN